X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers

被引：14
|
作者：
Holy, V
Darhuber, AA
Stangl, J
Bauer, G
Nutzel, J
Abstreiter, G
机构：
[1] Masaryk Univ, Fac Sci, Dept Solid State Phys, Lab Thin Films & Nanostruct, CS-61137 Brno, Czech Republic
[2] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria
[3] Tech Univ Munchen, Walter Schottky Inst, D-85748 Garching, Germany
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 06期
关键词：
D O I：
10.1088/0268-1242/13/6/009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the lateral and vertical correlation of the interface roughness of Si/SiGe multilayers grown on Si(001) substrates with a miscut between 0.2 degrees and 0.5 degrees using high resolution x-ray reflectivity. The theoretical analysis of the measurements proved that the established phenomenological models for the description of the interface profiles fail in the common case of moderately small miscut angles. We obtained qualitatively correct results for the roughness correlations using a microscopic kinetic step-flow growth model, which accounts for the aggregation of monolayer steps (step bunching) during the hetero-epitaxial growth.
引用
收藏
页码：590 / 598
页数：9
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