Semiconductor physics - Reliable performance

被引：6
|
作者：
Schenkel, T [1 ]
机构：
[1] EO Lawrence Berkeley Natl Lab, Ion Beam Technol Program, Berkeley, CA 94720 USA
来源：
NATURE MATERIALS | 2005年 / 4卷 / 11期
关键词：
D O I：
10.1038/nmat1514
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Single-ion implantation enables tuning of transistor performance, one dopant atom at a time.
引用
收藏
页码：799 / 800
页数：2
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