Light-Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO3 Film for a Flexible Multistate High-Storage Memory Device

被引：36
|
作者：
Sun, Bai [1 ,2 ]
Tang, Mei [1 ,2 ]
Gao, Ju [3 ]
Li, Chang Ming [1 ,2 ,3 ]
机构：
[1] Southwest Univ, ICEAM, Chongqing 400715, Peoples R China
[2] Chongqing Key Lab Adv Mat & Technol Clean Elect P, Chongqing 400715, Peoples R China
[3] Suzhou Univ Sci & Technol, Inst Mat Sci & Devices, Suzhou 215011, Peoples R China
来源：
CHEMELECTROCHEM | 2016年 / 3卷 / 06期
关键词：
ferroelectric memory; flexible and wearable; light-controlled; multistate memory; resistive switching; THIN-FILMS; ELECTRONICS; NANOWIRE; POLARIZATION; TRANSISTORS; FABRICATION; INTERFACE; MECHANISM; GRAPHENE; ARRAY;
D O I：
10.1002/celc.201600002
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A flexible memory device with an ITO/BiFeO3/Ti/Polyimide structure is prepared for light-controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high-storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light-controlled non-volatile multistate memory device with a high capacity and low cost.
引用
收藏
页码：896 / 901
页数：6
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