On the growth and doping of blue-green emitting ZnSe laser diodes

被引：7

作者：

Hommel, D ^{[1
]}

Behr, T ^{[1
]}

Kurtz, E ^{[1
]}

Jobst, B ^{[1
]}

Schull, K ^{[1
]}

Jakobs, A ^{[1
]}

Nurnberger, J ^{[1
]}

Einfeldt, S ^{[1
]}

Behringer, M ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-97074 WURZBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00879-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Structural, optical and electrical properties of green and blue emitting room temperature laser diodes grown by molecular beam epitaxy are presented. The influence of the growth start at the GaAs/ZnSe heterointerface is discussed based on cross sectional and plan view transmission electron microscopy studies. GaAs buffer layers are necessary for reproducible layer growth and stable room temperature lasing. Doping problems like the ratio of the net acceptor concentration to the overall nitrogen incorporation for binary, ternary and quaternary layers and laser diodes are discussed as well as the problem of ohmic contacts.

引用

页码：566 / 572

页数：7

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