Electrical and optical properties of Zn/(PEO)(4)ZnCl2/[CeO2 or CeO2-SnO2(17%)]; ITO thin film galvanic cells

被引:17
|
作者
Turkovic, A [1 ]
Orel, ZC [1 ]
机构
[1] NATL INST CHEM, LJUBLJANA 61115, SLOVENIA
关键词
galvanic cell; solid state cell; polymer electrolyte; thin films; dip-coating method;
D O I
10.1016/0167-2738(96)00357-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Galvanic cells Zn/(PEO)(4)ZnCl2/CeO2; ITO and Zn/(PEO)(4)ZnCl2/CeO2-SnO2 (17%); ITO have been formed. CeO2 and CeO2-SnO2 thin films were prepared by the sor-gel dip-coating method onto ITO glass plate. Polymer electrolyte foil (PEO)(4)ZnCl2 has been placed on top of CeO2; ITO or CeO2-SnO2; ITO double thin films. Zn thin foil anodes have been contacted on top of all these layers. Charge-discharge cycles were measured with a constant current of 2 mA. The complex impedance measurements of the polymer electrolyte has been performed in the range of I Hz to 1 MHz and in the temperature range from 290 to 400 K by applying Zn or Sn electrodes. UV-VIS-NIR absorption measurements of CeO2 and CeO2-SnO2 thin films cathodes have been performed before and after 1680 cycles in galvanic cells.
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页码:255 / 261
页数:7
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