High temperature oxidation behavior of MoSi2 in low pressure atmosphere

被引：5

作者：

Ibano, Akira ^{[1
]}

Yoshimi, Kyosuke ^{[1
]}

Yamauchi, Akira ^{[2
]}

Tu, Rong ^{[3
]}

Maruyama, Kouichi ^{[1
]}

Kurokawa, Kazuya ^{[2
]}

Goto, Takashi ^{[3
]}

机构：

[1] Tohoku Univ, Grad Sch Environm Studies, Sendai, Miyagi 9808579, Japan

[2] Hokkaido Univ, Ctr Adv Res Energy Convers Mat, Sapporo, Hokkaido 0608628, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

PRICM 6: SIXTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-3 | 2007年 / 561-565卷

关键词：

intermetallic compound; MoSi2; oxidation; low pressure; high temperature;

D O I：

10.4028/www.scientific.net/MSF.561-565.427

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

In this study, the high temperature oxidation behavior of polycrystalline MoSi2 in a low-pressure atmosphere was investigated. Polycrystalline MoSi2 was produced by the spark plasma sintering process. Oxidation tests were carried out at 1500 degrees C at either 10Torr or 760Torr in an Ar-20%O-2 atmosphere. For both conditions, the weight change peaked at the initial oxidation stage, and then their weights gradually increased with increasing oxidation time. The sample weight became heavier in the ambient pressure than in the low-pressure, but the evaporation oxidation was not significant in the low-pressure condition. After the low-pressure oxidation tests, the formation Of Mo5Si3 in the MoSi2 substrate was identified. The oxidation resistance Of MoSi2 at 1500 degrees C is discussed based on the obtained results.

引用

页码：427 / +

页数：2

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