The characteristics of ZnO-Bi2O3-based varistor ceramics doped withY2O3 and varying amounts of Sb2O3

被引:54
|
作者
Bernik, S
Macek, S
Bui, A
机构
[1] Jozef Stefan Inst, Dhaka 1000, Bangladesh
[2] Univ Toulouse 3, Lab Genie Elect, Toulouse, France
关键词
electrical properties; grain size; microstructure-final; varistor; ZnO;
D O I
10.1016/S0955-2219(03)00412-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZnO-Bi2O3-based varistor samples doped with 0.45 mol% of Y2O3 and varying amounts of Sb2O3 in the range from 1.8 to 0.0 mol% were fired at 1230 degreesC. Only in the samples co-doped with Sb2O3 did doping with Y2O3 resulted in the formation of a fine-grained Bi-Zn-Sb-Y-O phase (the Y2O3-containing phase) at the grain boundaries, which very effectively hinders the grain growth. Despite of a decrease in the amount of added Sb2O3 from 1.8 to 0.45 mol% and a significant decrease in the amount of spinel phase the samples had a similar ZnO grain size and a threshold voltage of 200 V/mm. The results confirmed that doping with Y2O3 is a very promising route for the production of fine-grained high-voltage ZnO-Bi2O3-based varistor ceramics, and determining the proper amounts of added Sb2O3 and Y2O3 is of great importance. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1195 / 1198
页数:4
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