A Cross-shaped Vertical Vacuum Channel Transistor

被引：3
|
作者：
Jin, Zhao [1 ]
Zhu, Zhuoya [1 ]
Lei, Wei [1 ]
Xie, Yi [2 ]
机构：
[1] Southeast Univ SEU, Sch Elect Sci & Engn, Nanjing, Peoples R China
[2] Sci & Technol Elect Opt Control Lab, Luoyang, Peoples R China
来源：
2022 5TH INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEMS AND SIMULATION (ICCSS 2022) | 2022年
关键词：
vacuum channel transistor; field emission; Finite Integration Technique (FIT);
D O I：
10.1109/ICCSS55260.2022.9802313
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vertical channel vacuum transistors are concerned due to high electron mobility, environmental resistance and compatibility with semiconductor processes. A new cross-shaped vertical channel vacuum transistor is proposed in this paper. The structure can effectively reduce gate leakage current and inter-electrode capacitance. Compared to previous structures of this type of device, cross-shaped structure has better emission efficiency and high-frequency performance.
引用
收藏
页码：16 / 20
页数：5
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