Temperature-driven n-p conduction type switching without structural transition in a Cu-rich chalcogenide, NaCu5S3

被引:0
|
作者
Qu, Shangqing [1 ,2 ]
Wang, Yonggang [2 ]
Xiao, Yu [3 ]
Yuan, Yujie [1 ]
Li, Shengyi [4 ,5 ]
Chen, Jikun [1 ]
Zhao, Lidong [3 ]
Xia, Zhiguo [1 ,6 ,7 ]
Zhao, Jing [1 ]
机构
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
[2] Ctr High Pressure Sci & Technol Adv Res HPSTAR, Beijing 100094, Peoples R China
[3] Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
[4] Chinese Acad Sci, Inst Chem, CAS Res Educ Ctr Excellence Mol Sci, CAS Key Lab Mol Nanostruct & Nanotechnol, Beijing 100190, Peoples R China
[5] Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China
[6] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Peoples R China
[7] South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Peoples R China
关键词
ULTRAHIGH THERMOELECTRIC PERFORMANCE; SPIN-CROSSOVER; ELECTRON; THERMOPOWER; HYSTERESIS;
D O I
10.1039/D0CC01429J
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report for the first time the discovery of reversible n-p conduction type switching in a chalcogenide, NaCu5S3, without structural transition. AC impedance and first-principles simulations of the ionic migration confirmed the local melting trends of the hexagonal copper lattice at high temperatures, which could result in superionic conductivity within NaCu5S3.
引用
收藏
页码:4882 / 4885
页数:4
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