Polytype formation in GaAs/GaP axial nanowire heterostructures

被引：21

作者：

Boulanger, Jonathan P. ^{[1
]}

LaPierre, Ray R. ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 332卷 / 01期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Crystal structure; Nanostructures; Planar defects; Molecular beam epitaxy; Semiconducting III-V materials; Nanowire; CORE-SHELL NANOWIRES; BEAM EPITAXY; GROWTH; INAS; TRANSISTORS; NANOWHISKERS;

D O I：

10.1016/j.jcrysgro.2011.07.021

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Transmission electron microscopy (TEM) studies are presented for Au-assisted vapor-liquid-solid (VLS) nanowire growth of gallium arsenide/gallium phosphide (GaAs/GaP) axial heterostructures. The supersaturation of the liquid Au-III-V alloy droplet during MBE growth was found to have a profound impact on both the crystal phase and growth rate of the nanowire heterostructures. Among these effects was the appearance of a previously unreported 4H GaP crystal phase. 4H GaP occurred at low Au-III-V droplet supersaturation following the transition from GaAs to GaP growth. Both crystal phase and growth rate were different for GaAs and GaP, underlining the importance of group V elements in Au-III-V droplet supersaturation and thus VLS nanowire growth. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：21 / 26

页数：6

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