Phonon and Electron Transport in Graphene Nanoribbons

被引：0
|
作者：
Mazzamuto, F. [1 ]
Nguyen, V. Hung [1 ,2 ]
Do, V. Nam [3 ]
Caer, C. [1 ]
Chassat, C. [1 ]
Saint-Martin, J. [1 ]
Dollfus, P. [1 ]
机构：
[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, Orsay, France
[2] Vietnamese Acad Sci & Technol, Inst Phys, Hanoi, Vietnam
[3] Hanoi Univ Technol, Hanoi Adv Sch Sci & Technol, Hanoi, Vietnam
来源：
2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年
关键词：
Phonon; Electron; Transport; Graphene; Nanoribbon; Thermoelectric; NEGF; CONDUCTANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An atomistic Green's function approach to simulating electron and phonon transport in graphene nanoribbons (GNRs) is presented. Phonons are described by an empirical Force-Constant model including interactions up to the fifth nearest neighbour while the nearest neighbour tight-binding Hamiltonian is used for electrons. The model was applied to investigate the edge dependence of GNR thermoelectric properties. The factor of merit ZT appears to be strongly enhanced in mixed-edge ribbons.
引用
收藏
页码：49 / 52
页数：4
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