P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance

被引：14
|
作者：
Lee, Rinus Tek-Po [1 ]
Tan, Kian-Ming [1 ]
Lim, Andy Eu-Jin [1 ]
Liow, Tsung-Yang [1 ]
Samudra, Ganesh S. [1 ]
Chi, Dong-Zhi [2 ]
Yeo, Yee-Chia [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 117576, Singapore
[2] Inst Mat Res & Engn, Singapore 119260, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 05期
关键词：
FinFET; nickel platinum; nickel silicide; resistance; Schottky barriers;
D O I：
10.1109/LED.2008.920755
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the integration of nickel platinum germanosilicide (Ni1-yPtySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni1-yPtySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni1-yPtySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Phi(P)(B)) among the Ni1-yPtySiGe candidates evaluated. The low Phi(P)(B) (0.309 eV) provides a 15% reduction in series resistance R-series. With a superior morphological stability and reduced R-series, FinFETs integrated with Ni0.90Pt0.10SiGe contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.
引用
收藏
页码：438 / 441
页数：4
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