Improved LDMOS-SCR for high-voltage electrostatic discharge (ESD) protection applications

被引：6
|
作者：
Song, Wenqiang [1 ]
Hou, Fei [1 ]
Du, Feibo [1 ]
Liu, Jizhi [1 ]
Liu, Zhiwei [1 ]
Liou, Juin J. [1 ,2 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen, Peoples R China
来源：
ELECTRONICS LETTERS | 2020年 / 56卷 / 13期
关键词：
electrostatic discharge; thyristors; MIS devices; p-i-n diodes; improved LDMOS-SCR; high-voltage electrostatic discharge protection applications; ESD current discharges; high holding voltage; high failure current; HBM ESD stress; improved lateral double-diffused MOS silicon-controlled rectifier; surface gated PIN diode path; BCD process; size; 0; 18; mum; voltage; 5; V; 24; current; 10; 04; A; 15; kV; DUAL-DIRECTION SCR; HOLDING VOLTAGE;
D O I：
10.1049/el.2020.0748
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved lateral double-diffused MOS silicon-controlled rectifier (ILDMOS-SCR) for high-voltage electrostatic discharge (ESD) protection applications has been proposed and verified in a 0.18 mu m 5 V/24 V BCD process. The proposed improved lateral double-diffused MOS silicon-controlled rectifier (LDMOS-SCR) is constructed by adding a gated P-type/intrinsic/N-type (PIN) diode into a conventional LDMOS-SCR. With part of the ESD current discharges from the surface gated PIN diode path, the proposed ILDMOS-SCR achieves a high holding voltage of 30 V as well as a high failure current of 10.04 A, which is evaluated to pass 15 KV Human Body Model (HBM) ESD stress.
引用
收藏
页码：680 / 681
页数：2
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