Optical and electrical characterization of poly(3-hexylthiophene-2,5-diyl) interface with Al and LiF

被引：8
|
作者：
Singh, Vipul [1 ]
Thakur, Anil K. [1 ]
Pandey, Shyam S. [1 ]
Takashima, Wataru [1 ]
Kaneto, Keiichi [1 ]
机构：
[1] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Wakamatsu Ku, Kitakyushu, Fukuoka 8080196, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 02期
关键词：
interface; photoluminescence; photo-induced memory; depletion layer; poly(3-hexylthiophene);
D O I：
10.1143/JJAP.47.1251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The qualitative nature of the interface of poly(3-hexylthiophene-2,5-diyl) (P3HT) with aluminum (Al) and lithium fluoride (LiF) have been studied by photoluminescence (PL) spectra and photo induced memory techniques. The PL quenching and photo induced memory effect are, clearly distinguishable in P3HT films coated with Al and LiF coated separately. It has been observed that LiF only forms an insulating barrier while aluminum creates a depletion layer with P3HT. The observed effects have been explained, based on carrier diffusion and band bending models.
引用
收藏
页码：1251 / 1255
页数：5
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