TITANIUM DOPED ZINC-OXIDE BASED THIN FILM TRANSISTORS: OPTIMIZATION OF THE SOURCE/DRAIN MATERIALS

被引：0

作者：

Zhao, Nannan ^{[1
,2
]}

Han, Dedong ^{[2
]}

Chen, Zhuofa ^{[1
,2
]}

Wu, Jing ^{[1
,2
]}

Cong, Yingying ^{[2
]}

Dong, Junchen ^{[1
,2
]}

Zhao, Feilong ^{[1
,2
]}

Zhang, Shengdong ^{[1
,2
]}

Zhang, Xing ^{[2
]}

Wang, Yi ^{[2
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper aims at improving the performances of Titanium-doped Zinc-oxide (TZO) Thin-Film-Transistors (TFTs) by optimizing the source/drain materials. We successfully fabricate TZO TFTs with different source/drain materials, such as AI, Mo, Cr, Mo/Al/Mo and Cr/AIICr. No intentional substrate-heating is performed during each deposition step and the highest process temperature is 80 degrees C. The results show that TFTs adopting Cr/AIICr as source/drain exhibit improved electrical properties with a high saturation mobility (mu(sat)) of 171.4 cm(2)V(-1)S(-1), a low subthreshold swing (SS) of 0.25 Y/decade, a high I-on/I-off ratio of 2x10(8) and a threshold voltage (Vth) of 3.0V.

引用

页数：3

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