Imaging characteristics of 0.12 μm dynamic random access memory pattern by KrF excimer laser lithography

被引：5

作者：

Nakao, S ^{[1
]}

Tsujita, K ^{[1
]}

Arimoto, I ^{[1
]}

Wakamiya, W ^{[1
]}

机构：

[1] Mitsubishi Elect Co, ULSI Dev Ctr, Itami, Hyogo 6648641, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 12B期

关键词：

optical lithography; KrF excimer laser; modified illumination; attenuating phase shift mask; high numerical aperture; lens aberration;

D O I：

10.1143/JJAP.38.6985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Imaging characteristics of a 0.12 mum dynamic random access memory (DRAM) cell pattern by KrF excimer laser lithography are investigated by optical image calculations. Using modified illuminations optimized for specific patterns and an attenuating phase shift mask (atten-PSM), depth of focus (DOF) can be achieved up to similar to0.8 mum with high numerical aperture (NA) of 0.70-0.75. However, the image quality is significantly degraded by lens aberration of -0.06 lambda in root-mean-square optical pass difference (RMS-OPD), which is observed in a stepper for 0.25 mum generation devices, Accordingly, the development of a low aberration lens is necessary to realize 0.121 mum DRAM cell pattern formation by KrF excimer laser lithography.

引用

页码：6985 / 6993

页数：9

共 50 条

[1] Imaging characteristics of 0.12 μm dynamic random access memory pattern by KrF excimer laser lithography
Nakao, Shuji
Tsujita, Kouichirou
Arimoto, Ichirou
Wakamiya, Wataru
[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (12 B): : 6985 - 6993
[2] Fabrication of 0.2 μm hole patterns in KrF excimer laser lithography
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[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (5 A): : 2640 - 2641
[3] 0.12 mu m hole pattern formation by KrF lithography for giga bit DRAM
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2640 - 2641
[5] Standing wave effect of various illumination methods in 0.25 μm KrF excimer laser lithography
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[J]. Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (6560-6564):
[6] CHARACTERISTICS OF A MONODISPERSE PHS-BASED POSITIVE RESIST (MDPR) IN KRF EXCIMER LASER LITHOGRAPHY
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