The ablation threshold in amorphous diamondlike carbon films exposed to an ArF excimer laser radiation

被引：3
|
作者：
Kaliteevskaya, NA [1 ]
Kon'kov, OI [1 ]
Terukov, EI [1 ]
Seisyan, RP [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
Laser Radiation; Unit Area; Pulse Energy; Silicon Substrate; Single Pulse;
D O I：
10.1134/1.1337244
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An experimental study of the laser-induced ablation threshold in amorphous diamondlike carbon films is reported. The aim is to assess the possibility of using the material as a photoresist in vacuum-ultraviolet laser lithography. Grown on silicon substrates, 10-nm films were il radiated by 20-ns pulses of a 193-nm ArF excimer laser with variable pulse energy per unit area Ep. It is found that the etch rate is very low if E-p < 20 mJ/cm(2), whereas a single pulse suffices to remove the film completely if E-p = 60 mJ/cm(2). This is attributed to an increase in the thermal ablation component. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：1032 / 1033
页数：2
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