Applications of time-resolved terahertz spectroscopy in ultrafast carrier dynamics

被引：5
|
作者：
Zhou, Qingli [2 ]
Zhang, Xicheng [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Terahertz Res, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
[2] Capital Normal Univ, Dept Phys, Minist Educ, Key Lab Terahertz Optoelect,Beijing Key Lab Terah, Beijing 100048, Peoples R China
来源：
CHINESE OPTICS LETTERS | 2011年 / 9卷 / 11期
基金：
中国国家自然科学基金; 美国国家科学基金会;
关键词：
TEMPERATURE-GROWN GAAS; INTERVALLEY SCATTERING; CONDUCTIVITY DYNAMICS; PROBE SPECTROSCOPY; PHOTOCONDUCTIVITY; GENERATION; NANOWIRES; MGB2;
D O I：
10.3788/COL201109.110006
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Three time-resolved terahertz (THz) spectroscopy methods (optical-pump/THz-probe spectroscopy, THz-pump/THz-probe spectroscopy, and THz-pump/optical-probe spectroscopy) are reviewed. These are used to characterize ultrafast dynamics in photo- or THz-excited semiconductors, superconductors, nanomaterials, and other materials. In particular, the optical-pump/THz-probe spectroscopy is utilized to investigate carrier dynamics and the related intervalley scattering phenomena in semiconductors. The recent development of intense pulsed THz sources is expected to affect the research in nonlinear THz responses of various materials.
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页数：4
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