Scanning-tunneling-microscopy observation of stress-driven surface diffusion due to localized strain fields of misfit dislocations in heteroepitaxy

被引：16

作者：

Springholz, G ^{[1
]}

Bauer, G ^{[1
]}

Holy, V ^{[1
]}

机构：

[1] MASARYK UNIV,DEPT SOLID STATE PHYS,BRNO 61137,CZECH REPUBLIC

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.54.4500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using in situ scanning-tunneling microscopy, the influence of localized strain fields of misfit dislocations on epitaxial growth is studied. We observe pronounced surface deformations caused by single dislocations and dislocation reactions, in excellent quantitative agreement with calculations based on elasticity theory. Due to the local reduction of strain energy at the surface above the interfacial dislocations, ridgelike structures are formed due to stress-driven surface diffusion during growth.

引用

页码：4500 / 4503

页数：4

共 42 条

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