Influence of arsenic stress on synthesis and localization of low-molecular-weight thiols in Pteris vittata

被引：25

作者：

Sakai, Yuki ^{[1
]}

Watanabe, Toshihiro ^{[1
]}

Wasaki, Jun ^{[2
]}

Senoura, Takeshi ^{[3
]}

Shinano, Takuro ^{[4
]}

Osaki, Mitsuru ^{[1
]}

机构：

[1] Hokkaido Univ, Res Fac Agr, Kita Ku, Sapporo, Hokkaido 0608589, Japan

[2] Hiroshima Univ, Grad Sch Biosphere Sci, Higashihiroshima 7398521, Japan

[3] Univ Tokyo, Grad Sch Agr & Life Sci, Bunkyo Ku, Tokyo 1138657, Japan

[4] Natl Agr Res Ctr Hokkaido Reg, Sapporo, Hokkaido 0628555, Japan

来源：

ENVIRONMENTAL POLLUTION | 2010年 / 158卷 / 12期

关键词：

Arsenic tolerance; Low-molecular-weight thiol; Pteris vittata; gamma-Glutamylcysteine synthetase; Oxidative stress; INDUCED OXIDATIVE STRESS; HYPERACCUMULATING FERN; HOLCUS-LANATUS; TOLERANCE; TRANSPORT; PHYTOCHELATINS; PHOSPHATE; EXPOSURE; L; ACCUMULATION;

D O I：

10.1016/j.envpol.2010.07.043

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

The roles of low-molecular-weight thiols (LMWTs), such as glutathione and phytochelatins, in arsenic (As) tolerance and hyperaccumulation in Pteris vittata an As-hyperaccumulator fern remain to be better understood. This study aimed to thoroughly characterize LMWT synthesis in P. vittata to understand the roles played by LMWTs in As tolerance and hyperaccumulation. LMWT synthesis in P. vittata was induced directly by As, and not by As-mediated oxidative stress. Expression of PvECS2. one of the putative genes of gamma-glutamylcysteine synthetase (gamma ECS), increases in P. vittata shoots at 48 h after the onset of As exposure, almost corresponding to the increase in the concentrations of gamma-glutamylcysteine and glutathione. Furthermore, localization of As showed similar trends to those of LMWTs in fronds at both whole-frond and cellular levels. This study thus indicates the specific contribution of LMWTs to As tolerance in P. vittata. gamma ECS may be responsible for the As-induced enhancement of LMWT synthesis. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：3663 / 3669

页数：7

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