Evaluation of Primary-Side-Regulated and Secondary-Side-Regulated High-Insulated Gate Drive Power Supply for 10-kV SiC MOSFET

被引：1

作者：

Zhang, Li ^{[1
,2
]}

Ji, Shiqi ^{[1
]}

Tang, Yi ^{[2
]}

Wang, J. ^{[2
]}

Wang, Fred ^{[1
]}

Tolbert, Leon M. ^{[1
]}

机构：

[1] Univ Tennessee, Knoxville, TN 37996 USA

[2] Nanyang Technol Univ, Singapore, Singapore

来源：

2020 IEEE 9TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (IPEMC2020-ECCE ASIA) | 2020年

关键词：

Gate driver power supply; primary-side-regulated; secondary-side-regulated; 10-kV SiC MOSFET; medium-voltage; 2ND-HARMONIC CURRENT; CONTROL SCHEMES; REDUCTION; CONVERTER;

D O I：

10.1109/IPEMC-ECCEAsia48364.2020.9367686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fast development of the 10-kV SiC MOSFET demands for high-insulated gate drive power supply (GDPS) with low inter-winding-capacitance, low load-regulation-rate, and high conversion-efficiency. This paper presents a comparative study of primary-side-regulated (PSR) and secondary-side-regulated (SSR) GDPS for 10-kV SiC MOSFETs. Design considerations, including high-insulated transformer design, output voltage regulation scheme, and control IC selection, are evaluated. To verify the theoretical analysis, two types of GDPSs are fabricated and tested in the lab, and the experimental results show that the PSR GDPS has better performance because of lower inter-winding-capacitance, lower load-regulation-rate, and higher conversion efficiency.

引用

页码：1156 / 1161

页数：6

共 5 条

[1] Flyback-based high-side gate driver for a 10-kV SiC MOSFET
Wolski, Kornel
Grzejszczak, Piotr
Barlik, Roman
2016 10TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG), 2016, : 390 - 395
[2] Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter
Li Zhang
Ji, Shiqi
Gu, Shida
Huang, Xingxuan
Palmer, James Everette
Giewont, William
Wang, Fei
Tolbert, Leon M.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2021, 68 (07) : 5712 - 5724
[3] Design Considerations of High-Voltage-Insulated Gate Drive Power Supply for 10 kV SiC MOSFET in Medium-Voltage Application
Zhang, Li
Ji, Shiqi
Gu, Shida
Huang, Xingxuan
Palmer, James
Giewont, William
Wang, Fred
Tolbert, Leon M.
THIRTY-FOURTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2019), 2019, : 425 - 430
[4] High-Density Current-Transformer-Based Gate-Drive Power Supply With Reinforced Isolation for 10-kV SiC MOSFET Modules
Hu, Jiewen
Wang, Jun
Burgos, Rolando
Wen, Bo
Boroyevich, Dushan
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (03) : 2217 - 2226
[5] Design Improvements for Primary-Side-Regulated High-Power Flyback Converters in Continuous-Conduction-Mode
Keogh, Bernard
Long, Billy
Leisten, Joe
2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015), 2015, : 492 - 497

← 1 →