Enhanced gain saturation model of non-linear semiconductor optical amplifiers

被引：1

作者：

Kharraz, O. M. ^{[1
]}

Supa'at, A. S. M. ^{[1
]}

Atieh, A. ^{[2
]}

Zamzuri, A. K. ^{[3
]}

Mahdi, M. A. ^{[4
]}

机构：

[1] Univ Teknol Malaysia, Dept Commun Engn, Skudai 81310, Johor, Malaysia

[2] Optiwave Syst Inc, 7 Capella Court, Ottawa, ON K2E 7X1, Canada

[3] Int Islamic Univ Malaysia, Dept Phys, Kuantan 25710, Pahang, Malaysia

[4] Univ Putra Malaysia, Fac Engn, Wireless & Photon Networks Res Ctr, Upm Serdang 43400, Selangor, Malaysia

来源：

IET OPTOELECTRONICS | 2018年 / 12卷 / 06期

关键词：

gallium arsenide; indium compounds; semiconductor optical amplifiers; III-V semiconductors; optical saturation; enhanced gain saturation model; nonlinear semiconductor optical amplifiers; material-dependent gain compression factor; extra gain compression term; nonlinear SOAs; rate equations; steep relaxation oscillations; mean square error; InGaAs; INGAASP LASERS;

D O I：

10.1049/iet-opt.2018.5029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study proposes an enhanced gain saturation model of non-linear semiconductor optical amplifiers (SOAs) by incorporating material-dependent gain compression factor. The rate equations are utilised with the extra gain compression term for Indium-Gallium-Arsenide material-based SOA to account for the steep relaxation oscillations behaviour of non-linear SOAs. The proposed gain saturation model is verified with experimental results that showed very good agreements with a mean square error of 0.094.

引用

页码：263 / 268

页数：6

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