Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p(+)-i-n(+) Si ultra-thin body transistor. The devices clearly display a.-shape transfer characteristic (i.e.,.-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Lambda-NDT peak is greater than 10(4), the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Lambda-NDT peak region is similar to 70 mV/dec. The position and the current level of the Lambda-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Lambda-NDT device could be prospective for next-generation arithmetic circuits.