Quantum conductance of In nanowires on Si(111) from first principles calculations

被引：7
|
作者：
Wippermann, S. [1 ]
Schmidt, W. G.
Calzolari, A.
Nardelli, M. Buonglorno
Stekolnikov, A. A.
Seino, K.
Bechstedt, F.
机构：
[1] Univ Paderborn, Lehrstuhl Theoret Phys, D-33095 Paderborn, Germany
[2] CNR, INFM, Natl Res Ctr, I-41100 Modena, Italy
[3] Oak Ridge Natl Lab, CSMD, NC 27269, NCSU Dept Phys, Oak Ridge, TN 37831 USA
[4] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany
来源：
SURFACE SCIENCE | 2007年 / 601卷 / 18期
关键词：
In nanowires; silicon surface; density functional calculations; electron transport;
D O I：
10.1016/j.susc.2007.04.053
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The quantum conductance of the paradigmatic quasi-one-dimensional In/Si(111) surface system is calculated for 4 x 1, 4 x 2 and 8 x 2 surface reconstructions. In agreement with experiment, we find the recently suggested formation of hexagons within the In nanowires [C. Gonzalez, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101] to drastically modify the electron transport along the In chains. In contrast, the formation of trimers barely changes the quantum conductance. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：4045 / 4047
页数：3
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