Fe/Si multi-layer thin films were prepared by alternate deposition using an electron-beam evaporation method. Electrochemical results through galvanostatic charge-discharge experiments are presented. It appears that the volumetric expansion of silicon during cycling can be effectively suppressed by forming a Fe layer between Si layers. The electrochemical characteristics of Fe/Si multi-layer film electrode can be controlled by the thickness, and number of stacked Si layers, and post-annealing. (C) 2003 Elsevier Science B.V. All rights reserved.
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Korea Inst Sci & Technol, Battery Res Ctr, Adv Energy Mat Proc Lab, Seoul 130650, South KoreaKorea Inst Sci & Technol, Battery Res Ctr, Adv Energy Mat Proc Lab, Seoul 130650, South Korea
Arie, Arenst Andreas
Chang, Wonyoung
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Korea Inst Sci & Technol, Battery Res Ctr, Adv Energy Mat Proc Lab, Seoul 130650, South KoreaKorea Inst Sci & Technol, Battery Res Ctr, Adv Energy Mat Proc Lab, Seoul 130650, South Korea
Chang, Wonyoung
Lee, Joong Kee
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Korea Inst Sci & Technol, Battery Res Ctr, Adv Energy Mat Proc Lab, Seoul 130650, South KoreaKorea Inst Sci & Technol, Battery Res Ctr, Adv Energy Mat Proc Lab, Seoul 130650, South Korea