Establishment and Analysis of a New Type of TSV Equivalent Circuit Model

Based on a new type of coaxial ring-tapered TSV structure, an equivalent circuit model of this structure is constructed in this paper to analyze the transmission characteristics. S-11 and S-21 are obtained with the geometric model and equivalent circuit model simulated by HFSS and ADS respectively. The experimental results show that the two models have a good fitting effect: in the range of 0-40 GHz, the maximum error of S-11 is within 8%; and the maximum error of S-21 is within 5%, which verifies the correctness of the equivalent circuit model. The specific effects of each parasitic parameter on S-11 is found that the silicon substrate capacitance has a great impact on high frequency, and S-11 can be increased by 0.15 dB with only 1fF silicon substrate capacitance, and the remaining parasitic parameters have a small impact on S-11.