A Comprehensive Modeling Approach of Electronic Properties in III-V Digital Alloys

被引：0
|
作者：
Ahmed, Sheikh Z. [1 ]
Zheng, Jiyuan [2 ]
Tan, Yaohua [3 ]
Campbell, Joe C. [1 ]
Ghosh, Avik W. [1 ,4 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol, Beijing 100084, Peoples R China
[3] Synopsys Inc, Mountain View, CA 94043 USA
[4] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA
来源：
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021) | 2021年
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/SISPAD54002.2021.9592564
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We employ an Environment-Dependent Tight Binding Model and a band unfolding technique to study the effect of strain in III-V digital alloys. Furthermore, we employ the Non-Equilibrium's Green's Function formalism and a Boltzmann transport solver to study the carrier transport in these digital alloys.
引用
收藏
页码：138 / 140
页数：3
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