Spectral dependence of light extraction efficiency of high-power III-nitride light-emitting diodes

被引：8
|
作者：
Karpov, Sergey Yu. [1 ]
Binder, Michael [2 ]
Galler, Bastian [2 ]
Schiavon, Dario [2 ]
机构：
[1] Soft Impact Ltd, STR Grp, St Petersburg 194156, Russia
[2] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 05期
关键词：
nitrides; light emitting diodes; light extraction; efficiency; wavelength dependence;
D O I：
10.1002/pssr.201510073
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using the recently suggested method of processing the data on external quantum efficiency as a function of output optical power, we have estimated the dependence of light extraction efficiency of high-power light-emitting diodes (LEDs) on their emission wavelength varied between 425 nm and 540 nm. The extraction efficiency is found to increase with the wavelength from similar to 80% to similar to 85% in this spectral range and to correlate with the wavelength dependence of reflectivity of the large-area p-electrode being the essential unit of the LED chip design. The correlation found identifies the incomplete reflection of emitted light from the electrode as the major mechanism eventually controlling the spectral dependence of the efficiency of light extraction from the LEDs. [GRAPHICS] Spectral dependence of light extraction efficiency of the UX: 3 (TM) LED chip: comparison of experiment and modelling results. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：312 / 316
页数：5
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