Ultrafast all-optical modulation on a silicon chip

被引：112

作者：

Preble, SR ^{[1
]}

Xu, QF ^{[1
]}

Schmidt, BS ^{[1
]}

Lipson, M ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

OPTICS LETTERS | 2005年 / 30卷 / 21期

关键词：

D O I：

10.1364/OL.30.002891

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We experimentally demonstrate ultrafast all-optical modulation using a micrometer-sized silicon photonic integrated device. The device transmission is strongly modulated by photoexcited carriers generated by low-energy pump pulses. A p-i-n junction is integrated on the structure to permit control of the generated carrier lifetimes. When the junction is reverse biased, carriers are extracted from the device in a time as short as 50 ps, permitting greater than 5 Gbit/s modulation of optical signals on a silicon chip. (c) 2005 Optical Society of America.

引用

页码：2891 / 2893

页数：3

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