Formation of an ordered pattern of Bi nanolines on InAs(100) by self-assembly

被引：15

作者：

Ahola-Tuomi, M. ^{[1
]}

Laukkanen, P. ^{[1
]}

Punkkinen, M. P. J. ^{[1
]}

Perala, R. E. ^{[1
]}

Vayrynen, I. J. ^{[1
]}

Kuzmin, M. ^{[2
]}

Schulte, K. ^{[3
]}

Pessa, M. ^{[4
]}

机构：

[1] Univ Turku, Dept Phys, FIN-20014 Turku, Finland

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

关键词：

D O I：

10.1063/1.2831691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembly of uniform patterns of nanolines over large surface areas has been proven to be difficult. The authors report that bismuth (Bi) adsorbate self-assembles into an ordered pattern of Bi nanolines separated by 4.3 nm on the Bi-stabilized InAs(100)(2x1). The resulted nanoline surface is studied by scanning tunneling microscopy (STM) and low-energy electron diffraction. The plausible atomic models for the Bi nanolines are proposed on the basis of the STM results. The Bi lines are suggested to consist of two chains of adjacent Bi dimers positioned parallel to the chain and parallel to the Bi dimers of the (2x1) substrate. (c) 2008 American Institute of Physics.

引用

页数：3

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