Low Carrier Density Epitaxial Graphene Devices On SiC

被引：58
|
作者：
Yang, Yanfei [1 ,2 ]
Huang, Lung-I. [1 ,3 ]
Fukuyama, Yasuhiro [4 ]
Liu, Fan-Hung [5 ]
Real, Mariano A. [6 ]
Barbara, Paola [2 ]
Liang, Chi-Te [3 ,5 ]
Newell, David B. [1 ]
Elmquist, Randolph E. [1 ]
机构：
[1] NIST, Gaithersburg, MD 20899 USA
[2] Georgetown Univ, Dept Phys, Washington, DC 20057 USA
[3] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan
[4] Natl Metrol Inst Japan NMIJ AIST, Tsukuba, Ibaraki 3058563, Japan
[5] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 10617, Taiwan
[6] Inst Nacl Tecnol Ind, Buenos Aires, DF, Argentina
来源：
SMALL | 2015年 / 11卷 / 01期
关键词：
RESISTANCE; FILMS;
D O I：
10.1002/smll.201400989
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
[No abstract available]
引用
收藏
页码：90 / 95
页数：6
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