Cryogenic MOST for focal plane readout electronics

被引:0
|
作者
Bock, NE [1 ]
Cherepov, EI [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源
关键词
cryogenic MOS transistor; cryogenic readout; CMOS multiplexer;
D O I
10.1117/12.321757
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
At temperatures below 20 K conventional MOS transistors continue to work, but excessive noise and current-voltage anomalies such as kink, effect and hysteresis appear on their output characteristics because of carrier freeze-out in silicon. A cryogenic MOS transistor was proposed to prevent the anomalies. The paper describes the cryogenic transistor structure, its performance and the results of its application in a 64x1 CMOS multiplexer.
引用
收藏
页码:122 / 127
页数:6
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