Tunneling studies of electronic state in high T-c Bi-system

被引：5
|
作者：
Suzuki, M
Taira, M
Zheng, XG
机构：
[1] Department of Physics, Faculty of Science and Engineering, Saga University
来源：
CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷
关键词：
D O I：
10.1007/BF02562790
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The tunneling measurements were carried out for the junctions fabricated on a ceramic and a single crystal of Bi2Sr2CaCu2O8-x. It was found that the most tunnel junctions fabricated on a a-b plane of single crystal does not have a conductance peak (CP), while the most junctions on the ceramic have CP. Kashiwaya et al. theoretically predicts that the junction formed on a d-wave superconductor can give various tunnel conductance characteristics. In the present experiment, the tunneling characteristics in the high T-c Bi-system superconductor ware found to qualitatively agree with the theoretical prediction.
引用
收藏
页码：1351 / 1352
页数：2
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