Preparation and characterization of In2S3 semiconductor thin films using the sol-gel method

This study describes the In2S3 semiconductor thin film coating on glass substrate by sol-gel method. The In2S3 thin film samples were prepared and examined by the X-ray diffraction (XRD), the UV-visible optical absorption and transmission study, and the Scanning Electron Microscope (SEM) image analyses. The XRD analysis results show that the In2S3 semiconductor thin films prepared by sol-gel method is formed at T similar to 360-520 A degrees C temperature interval. Band gap energy and optical absorption spectrum analysis of the In2S3 thin films reveal that Eg similar to 2.51 eV for the In2S3 thin films. According to the EDX result the film was In-rich with the In/S = 1.42 ratio. The thickness of prepared In2S3 layer is about 400 nm.