Improving perovskite solar cells photovoltaic performance using tetrabutylammonium salt as additive

At present, the non-radiative recombination loss at the interface is a major challenge for perovskite solar cells (PSCs), which seriously deteriorates the optoelectronic performance of the devices. Here, tetrabutylanunonium bromide (TBAB) is incorporated into the perovskite precursor solution utilized as an ion dopant, leading to a high-quality perovskite films with enhanced crystallinity and smooth surface, resulting in decreased grain boundaries and defect density. Thus, the hole-electron recombination and hysteresis effect are effectively suppressed in the modified devices. Finally, an optimized device yields a maximum power conversion efficiency (PCE) of 20.16%, with an open circuit voltage (V-OC) of 1.119 V, a short circuit current density (J(SC)) of 23.41 mA cm(-2) and a fill factor (FF) of 76.97% under 100 mW cm(-2) illuminations.