Switching Magnetic Anisotropy of SrRuO3 by Capping-Layer-Induced Octahedral Distortion

被引：15

作者：

Lin, Shan ^{[1
,2
,3
]}

Zhang, Qinghua ^{[1
,2
]}

Roldan, Manuel A. ^{[4
]}

Das, Sujit ^{[5
]}

Charlton, Timothy ^{[6
]}

Fitzsimmons, Michael R. ^{[6
,7
]}

Jin, Qiao ^{[1
,2
,3
]}

Li, Sisi ^{[8
,9
]}

Wu, Zhenping ^{[8
,9
]}

Chen, Shuang ^{[10
]}

Guo, Haizhong ^{[10
]}

Tong, Xin ^{[11
]}

He, Meng ^{[1
,2
]}

Ge, Chen ^{[1
,2
]}

Wang, Can ^{[1
,2
,3
,12
]}

Gu, Lin ^{[1
,2
,3
,12
]}

Jin, Kui-juan ^{[1
,2
,3
,12
]}

Guo, Er-Jia ^{[1
,2
,3
,12
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Arizona State Univ, Eyring Mat Ctr, Tempe, AZ 85287 USA

[5] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[6] Oak Ridge Natl Lab, Neutron Scattering Div, Oak Ridge, TN 37831 USA

[7] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA

[8] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[9] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China

[10] Zhengzhou Univ, Sch Phys Engn, Zhengzhou 450001, Peoples R China

[11] Chinese Acad Sci, Inst High Energy Phys, China Spallat Neutron Source, Beijing 10049, Peoples R China

[12] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

来源：

PHYSICAL REVIEW APPLIED | 2020年 / 13卷 / 03期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

ELECTRONIC-STRUCTURE; THIN-FILMS; MAGNETORESISTANCE; PHASES;

D O I：

10.1103/PhysRevApplied.13.034033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.

引用

页数：9

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