Optical properties of As doped ZnO thin films prepared by pulsed laser deposition technique

被引：43
|
作者：
Shan, FK [1 ]
Shin, BC [1 ]
Kim, SC [1 ]
Yu, YS [1 ]
机构：
[1] Dongeui Univ, Elect Ceram Ctr, Pusan 614714, South Korea
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期
关键词：
annealing; films; impurities; optical properties; ZnO;
D O I：
10.1016/S0955-2219(03)00489-8
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZnO thin films are deposited on glass substrates at adapted experimental conditions during the pulsed laser deposition (PLD). The as-deposited thin films are attached by GaAs wafers and annealed at different temperatures and for different times. Transmittance and photoluminescence (PL) are measured to evaluate the As doping. With increasing annealing temperature and annealing time the transmission of films in the VIS range decreases. The band gap energies are determined by a linear fit of the absorption edge. In PL spectra, two PL emission peaks are found in all samples, one is the near band edge emission, and the ether is green emission. The annealing decreases the intensity of the green emission. The aging is found in ZnO thin films by PL measurements. As time goes on, the green emission peak decreases, and the near band emission peak is enhanced because of the decrease of oxygen vacancies in thin films. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1861 / 1864
页数：4
相关论文
共 50 条
  • [1] Optical properties of thin films of ZnO prepared by pulsed laser deposition
    Sans, JA
    Segura, A
    Mollar, M
    Marí, B
    [J]. THIN SOLID FILMS, 2004, 453 : 251 - 255
  • [2] Structural, optical and magnetic properties of Mn doped ZnO thin films prepared by pulsed laser deposition
    Aravind, Arun
    Jayaraj, M. K.
    Kumar, Mukesh
    Chandra, Ramesh
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2012, 177 (13): : 1017 - 1022
  • [3] Optical properties of NiO thin films prepared by pulsed laser deposition technique
    Franta, D
    Negulescu, B
    Thomas, L
    Dahoo, PR
    Guyot, M
    Ohlídal, I
    Mistrík, J
    Yamaguchi, T
    [J]. APPLIED SURFACE SCIENCE, 2005, 244 (1-4) : 426 - 430
  • [4] PROPERTIES OF GaN-DOPED ZnO THIN FILMS PREPARED BY PULSED LASER DEPOSITION
    Elanchezhiyan, J.
    Lee, D. W.
    Lee, W. J.
    Shin, B. C.
    [J]. MODERN PHYSICS LETTERS B, 2010, 24 (28): : 2785 - 2791
  • [5] Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition
    Huang, Huiming
    Ou, Yangjun
    Xu, Sheng
    Fang, Guojia
    Li, Meiya
    Zhao, X. Z.
    [J]. APPLIED SURFACE SCIENCE, 2008, 254 (07) : 2013 - 2016
  • [6] Properties of InAs co-doped ZnO thin films prepared by pulsed laser deposition
    Elanchezhiyan, J.
    Shin, B. C.
    Lee, W. J.
    Park, S. H.
    Kim, S. C.
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2009, 44 (12) : 1319 - 1322
  • [7] Electrochromic properties of ZnO thin films prepared by pulsed laser deposition
    Ding, F
    Fu, ZW
    Qin, QZ
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (08) : 418 - 419
  • [8] Correlation between optical and transport properties of Ga-doped ZnO thin films prepared by pulsed laser deposition
    Sans, JA
    Segura, A
    Sánchez-Royo, JF
    Barber, V
    Hernández-Fenollosa, MA
    Marí, B
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (1-4) : 282 - 290
  • [9] Optical properties of nanostructured ZnO prepared by a pulsed laser deposition technique
    Jamal, Raied K.
    Hameed, Mohammed A.
    Adem, Kadhim A.
    [J]. MATERIALS LETTERS, 2014, 132 : 31 - 33
  • [10] ZnO thin films prepared by pulsed laser deposition
    Tsoutsouva, M. G.
    Panagopoulos, C. N.
    Papadimitriou, D.
    Fasaki, I.
    Kompitsas, M.
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (06): : 480 - 483
12345