Recovery behavior of point defects after low-dose neutron irradiation of sintered SiC by thermal diffusivity and swelling measurements

被引:11
|
作者
Yamazaki, Saishun [1 ]
Yoshida, Katsumi [2 ]
Yano, Toyohiko [2 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
[2] Tokyo Inst Technol, Res Lab Nucl Reactors, Meguro Ku, Tokyo 1528550, Japan
关键词
SILICON-CARBIDE; ELECTRICAL-RESISTIVITY; ION; 1400-DEGREES-C; TEMPERATURES; CERAMICS;
D O I
10.1016/j.jnucmat.2010.12.178
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Effects of neutron irradiation on physical property change of two kinds of sintered alpha-SiC ceramics were examined through the post-irradiation recovery experiments. Changes of macroscopic length and thermal diffusivity due to post-irradiation isothermal annealing up to 6 h between room temperature and 1400 degrees C were measured. Results of both measurements indicated almost same recovery tendency for each specimen. The SiC specimen containing Al(2)O(3) showed large change in the activation energy of both recoveries at similar to 950 degrees C and 1200 degrees C, and these of the SiC specimen containing B(4)C showed large change at similar to 800 degrees C, 950 degrees C and 1200 degrees C. Activation energies of macroscopic length recovery for both specimens from irradiation temperature to the lower temperature boundary were 0.1-0.2 eV and those of the second temperature range were 0.8-0.9 eV, respectively. These values indicated that the recovery of these properties is proceeded by the recombination of Frenkel pairs of both C and Si at various configurations. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:425 / 429
页数:5
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