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- [4] Etching of n-si(111) in 40% NH4F solution investigated by OCP, in situ EC-STM, and ATR-FTIR spectroscopic methods JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (05): : 1533 - 1538
- [6] In-situ infrared observation of etching and oxidation processes of si surface in NH4F solution SPECTROSCOPIC TOOLS FOR THE ANALYSIS OF ELECTROCHEMICAL SYSTEMS, 2002, 99 (15): : 161 - 170
- [7] Alternative NH4F/HCl solution for ultraclean Si(001) surface JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (05): : 2542 - 2548
- [10] Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution Appl Surf Sci, (146-150):