InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength λ 2.38 μm

被引：38
|
作者：
Shih, DK [1 ]
Lin, HH [1 ]
Lin, YH [1 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 22期
关键词：
D O I：
10.1049/el:20010894
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Application of a novel InAsN alloy on a laser device is reported for the first time. The four-period InAs0.97N0.03-In0.53Ga0.47As-InP strained multiple quantum well laser, grown by gas source molecular beam epitaxy with an RF-coupled plasma nitrogen source, lased under pulsed operation at 2.38 mum at 260 K. A threshold current density of 3.6 KA/cm(2) at 260 K and a characteristic temperature of 62 K have been achieved.
引用
收藏
页码：1342 / 1343
页数：2
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