Metal and contaminant accumulation in ion beam induced film growth

被引：0
|
作者：
Carter, G [1 ]
Nobes, MJ [1 ]
McLaren, MG [1 ]
机构：
[1] UNIV SALFORD,SCI RES INST,SALFORD M5 4WT,LANCS,ENGLAND
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：761 / 768
页数：8
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