Wideband, high-efficiency GaN power amplifiers utilizing a non-uniform distributed topology

被引：52
|
作者：
Gassmann, J. [1 ]
Watson, P. [1 ]
Kehias, L. [1 ]
Henry, G. [2 ]
机构：
[1] AF Res Lab, Wright Patterson AFB, OH 45433 USA
[2] Northrop Grumman Corp, Linthicum, MD 21090 USA
来源：
2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年
关键词：
distributed amplifiers; broadband amplifiers; power amplifiers; MMICs; phased arrays;
D O I：
10.1109/MWSYM.2007.379976
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly efficient, wideband power amplifier designed in GaN technology and utilizing a non-uniform distributed topology is reported in this paper. Measured results of an NGES fabricated NDPA demonstrate very high efficiency across the multi-octave bandwidth. Average CW output power and PAE across 2-15 GHz was 5.5 W and 25%, respectively. Maximum output power reached 6.9 W with 32% PAE at 7 GHz. A follow-on effort utilizing NGST's mmW foundry process was initiated in an attempt to achieve even higher efficiencies while compacting the size of the chip.
引用
收藏
页码：615 / 618
页数：4
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