Interface Effects on the Ion Transport of Epitaxial Y2Zr2O7 Films

被引:11
|
作者
Gilardi, Elisa [1 ,2 ]
Gregori, Giuliano [1 ,2 ]
Wang, Yi [1 ,2 ]
Sigle, Wilfried [1 ,2 ]
van Aken, Peter A. [1 ,2 ]
Maier, Joachim [1 ,2 ]
机构
[1] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany
[2] Paul Scherrer Inst, Lab Multiscale Mat Expt, CH-5232 Villigen, Switzerland
关键词
Y2Zr7O7; ionic conductivity; interface effect; epitaxial films; mobility; ELECTRICAL-CONDUCTIVITY; OXYGEN; PYROCHLORE; FLUORITE; DISLOCATIONS; TEMPERATURE; SIMULATION; DIFFUSION; ZIRCONATE; BOUNDARY;
D O I
10.1021/acsami.7b00773
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The systematic study of the ionic transport properties of epitaxial Y2Zr2O7 films with defective fluorite structure reveals an enhanced oxygen vacancy conductivity at the interface between the films and the MgO(110) substrate, which is characterized by a high density of misfit dislocations. This beneficial effect is discussed in terms of space-charge and mobility effects.
引用
收藏
页码:27257 / 27265
页数:9
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