Nitride-based surface acoustic wave devices and applications

被引：31

作者：

Calle, F ^{[1
]}

Pedrós, J ^{[1
]}

Palacios, T ^{[1
]}

Grajal, J ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecommun, Inst Sistemas Optoelect & Microtecnol, Madrid 28040, Spain

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssc.200460605

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A review of the fabrication techniques of surface acoustic wave (SAW) devices in nitrides, and their most relevant device properties, is presented. Several acoustic modes are observed in the transfer functions of the filters: besides the Rayleigh wave, guided modes (Sezawa) arise when the sound velocity in the nitride layer is lower than in the substrate, and pseudobulk modes may also appear. The effect of the substrate characteristics will be addressed, including the anisotropy found in nitride devices grown on sapphire due to the crystal structure mismatch. Regarding applications, some results in the sensor and photonics fields are summarized. Finally, two novel devices will be discussed: a SAW-assisted photodetector, based on the integration of a SAW generator and a UV photodetector, and a DC controlled SAW filter, obtained by the fabrication of a SAW device on a 2DEG AlGaN/GaN heterostructure. (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.

引用

页码：976 / 983

页数：8

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