Heteroepitaxy of Si1-xGex layers and Ge-Si1-xGex superlattices on Si(100) substrates by GeH4-Si MBE: Growth kinetics and structural studies.

被引：0

作者：

Orlov, LK ^{[1
]}

Tolomasov, VA ^{[1
]}

Potapov, AV ^{[1
]}

Vdovin, VI ^{[1
]}

Milvidskii, MG ^{[1
]}

机构：

[1] INST RARE MET GIREDMET, MOSCOW, RUSSIA

来源：

COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have applied GeH4-Si MBE for growing Ge-Si1-xGex superlattices on Si(100). A numerical simulation of a growth kinetics has been made for a wide range of technological parameters. We have investigated the distribution and the structure of defects inside heteroepitaxial Si1-xGex layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. We found out that plastic deformation on the layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer.

引用

页码：205 / 208

页数：4

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