Understanding the Electron-Doping Mechanism in Potassium-Intercalated Single-Walled Carbon Nanotubes

被引:17
|
作者
Kroeckel, Claudia [2 ,3 ]
Preciado-Rivas, Maria Rosa [1 ]
Torres-Sanchez, Victor Alexander [1 ]
Mowbray, Duncan J. [1 ]
Reich, Stephanie [4 ]
Hauke, Frank [2 ,3 ]
Chaain-Torres, Julio C. [1 ]
Hirsch, Andreas [2 ,3 ]
机构
[1] Yachay Tech Univ, Sch Phys Sci & Nanotechnol, Urcuqui 100119, Ecuador
[2] Friedrich Alexander Univ Erlangen Nuremberg, Dept Chem & Pharm, Nikolaus Fiebiger Str 10, D-91058 Erlangen, Germany
[3] Friedrich Alexander Univ Erlangen Nuremberg, Joint Inst Adv Mat & Proc ZMP, Nikolaus Fiebiger Str 10, D-91058 Erlangen, Germany
[4] Free Univ Berlin, Dept Phys, Arnimallee 14, D-14195 Berlin, Germany
关键词
RAMAN-SCATTERING; MODES; BUNDLES; SPECTROSCOPY; DISSOLUTION; INTENSITY;
D O I
10.1021/jacs.9b11370
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single-walled carbon nanotubes (SWCNTs) can be doped with potassium, similar to graphite, leading to intercalation compounds. These binary systems exhibit a clear metallic character. However, the entire picture of how electron doping (e-doping) modifies the SWCNTs' vibrational spectra as a function of their diameter, chirality, and metallicity is still elusive. Herein, we present a detailed study of the intercalation and solid state reduction of metallic and semiconducting enriched HiPco SWCNTs. We performed a combined experimental and theoretical study of the evolution of their Raman response with potassium exposure, focusing specifically on their radial breathing mode (RBM). We found the charge donated from the potassium atoms occupies antibonding pi orbitals of the SWCNTs, weakening their C-C bonds, and reducing the RBM frequency. This RBM downshift with increasing doping level is quasi-linear with a steplike behavior when the Fermi level crosses a van Hove singularity for semiconducting species. Moreover, this weakening of the C-C bonds is greater with decreasing curvature, or increasing diameter. Overall, this suggests the RBM downshift with e-doping is proportional to both the SWCNT's integrated density of states (DOS) Q(epsilon) and diameter d. We have provided a precise and complete description of the complex electron doping mechanism in SWCNTs up to a charge density of -18 me/C, far beyond that achievable by standard gate voltage studies, not being the highest doping possible, but high enough to track the effects of doping in SWCNTs based on their excitation energy, diameter, band gap energy, chiral angle, and metallicity. This work is highly relevant to tuning the electronic properties of SWCNTs for applications in nanoelectronics, plasmonics, and thermoelectricity.
引用
收藏
页码:2327 / 2337
页数:11
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