Spin accumulation and magnetotransport in Co-Al-Co single-electron transistors

被引：0
|
作者：
Shyu, J. H. [2 ]
Chen, J. W. [2 ]
Yao, Y. D. [1 ]
Wu, J. K. [1 ]
机构：
[1] Tatung Univ, Dept Mat Engn, Taipei 104, Taiwan
[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 12期
关键词：
D O I：
10.1002/pssa.200777145
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The bias-voltage dependent oscillations of the magnetoresistance in Co-Al-Co single-electron transistors have been investigated. Above the critical voltage comprising of superconducting gap and the charging energy, the conductance-voltage characteristics show an oscillatory behavior with increasing bias-voltage, resulting from the Coulomb staircase. We demonstrate that magnetoresistance could vary periodically from positive to negative values with bias-voltage. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3999 / 4003
页数：5
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