The α-particle excited scintillation response of the liquid phase epitaxy grown LuAG:Ce thin films

被引：38

作者：

Prusa, P. ^{[1
]}

Cechak, T. ^{[1
]}

Mares, J. A. ^{[2
]}

Nikl, M. ^{[2
]}

Beitlerova, A. ^{[2
]}

Solovieva, N. ^{[2
]}

Zorenko, Yu. V. ^{[3
]}

Gorbenko, V. I. ^{[3
]}

机构：

[1] Czech Tech Univ Prague, Fac Nucl Sci & Phys Engn, Prague 11519, Czech Republic

[2] ASCR, Inst Phys, Prague 16253, Czech Republic

[3] Ivan Franko Natl Univ Lviv, Lab Optoelect Mat, UA-79017 Lvov, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.2835458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Liquid phase epitaxy grown Lu(3)Al(5)O(12):Ce (LuAG:Ce) 20 mu m thick films and plate cut from the bulk Czochralski-grown LuAG:Ce crystal were prepared for comparison of photoelectron yield (PhY) and PhY dependence on shaping time (0.5-10 mu s). (241)Am (alpha particles) was used for excitation. At the 0.5 mu s shaping time, the best film shows comparable PhY with the bulk sample. PhY of bulk material increases noticeably more with shaping time than that of the films. Energy resolution of films is better. Influence of Pb(2+) contamination in the films (from the flux) and antisite Lu(Al) defect in bulk material is discussed. (c) 2008 American Institute of Physics.

引用

页数：3

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