Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)

被引：1
|
作者：
Lei, W [1 ]
Chen, YH [1 ]
Wang, YL [1 ]
Ye, XL [1 ]
Jin, P [1 ]
Xu, B [1 ]
Zeng, YP [1 ]
Wang, ZG [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5 | 2005年 / 475-479卷
关键词：
polarized photoluminescence; temperature-dependent photoluminescence; InAs quantum wires; InP;
D O I：
10.4028/www.scientific.net/MSF.475-479.1897
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.
引用
收藏
页码：1897 / 1900
页数：4
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