Ultra-wide bandwidth THz emission from a semiconductor irradiated with intense, radially-polarized, Bessel-Gauss pulses

被引：0
|
作者：
Chau, KJ [1 ]
Elezzabi, AY [1 ]
机构：
[1] Ultrafast Photon & Nanoopt Lab, Edmonton, AB T6G 2V4, Canada
来源：
ULTRAFAST PHENOMENA XIV | 2005年 / 79卷
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D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
THz generation from a semiconductor irradiated with a focused. high intensity radially-polarized Bessel-Gauss pulse is modeled. When compared to a Gaussian pulse. the Bessel-Gauss pulse exerts stronger ponderomotive force on photocarriers. resulting in an order of magnitude increase in the THZ emission power.
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页码：708 / 710
页数：3
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